Sample preparation


  • Magnetron sputtering
  • Atomic layer deposition (ALD, PEALD)
  • Vacuum evaporation


Atomic layer deposition (ALD, PEALD)

Atomic layer deposition (ALD) is a thin film deposition technique that is based on the sequential use of a gas phase chemical process. The majority of ALD reactions use two chemicals, typically called precursors. These precursors react with the surface of a material one at a time in a sequential, self-limiting, manner. In contrast to chemical vapor deposition, the precursors are never present simultaneously in the reactor, but they are inserted as a series of sequential, non-overlapping pulses. In each of these pulses the precursor molecules react with the surface in a self-limiting way, so that the reaction terminates once all the reactive sites on the surface are consumed. Consequently, the maximum amount of material deposited on the surface after a single exposure to all of the precursors (a so-called ALD cycle) is determined by the nature of the precursor-surface interaction. By varying the number of cycles it is possible to grow materials uniformly and with high precision (practically by atomic layer) on arbitrarily complex and large substrates. (see )

We have a Beneq TFS 200 ALD system which is equipped with liquid and gas precursor lines and plasma option (for plasma enhanced ALD). Currently available precursors: TMA, DEZ and TiCl4 for Al2O3, ZnO and TiO2 preparation, respectively, by both thermal and plasma enhanced processes.

Contact: Dr. Zoltán Erdélyi, Dr. Bence Parditka